c^^mi-gonauctoi lpioaucti, dna.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon controlled rectifier 0.8a rms up to 400 volts symbol a ?b ?b| *o e ? ?1 j l m <* 0 5 inc min. .170 .0 1 6 ,0 1 ? -its .125 095 ,045 .139 .900 ? .**? 1 1 5 .06 0 hes max. 2 1 0 02 1 9 i ? .105 .1 6 5 .1 0 5 oss ? ? .050 ? ? .105 milliu min 4.5 6 .407 .407 496 3.9 4 2.4 2 1. 1 5 3. 4 3 1 z 70 ? s 35 29 3 2.4 2 etefts max. 5.3 3 .5 33 .482 5.20 4. 1 9 2.6 6 1.39 ? ? 1.27 ? ? 2.c 6 notes 1.3 3 l|3 3 3 2 notes: 1. three leads. 2. contour of the package beyond this zone is uncontrolled. 3 (three lead*) ** applies ictween l| and l2 4k applies betveen l? and 9inch (12.70 mm) from seatind m.ane diameter 8 uneontmollec in l) and ieyono .5 inch (12.70mm from seating plane. maximum allowable ratings type c203y C203YY c203a c203b c203c c203d repetitive peak off-state - voltage,vdrm<1) tc " -65 c to +125 c 30 volts 60 volts 100 volts 200 volts 300 volts 400 volts repetitive peak reverse voltage, vdrm(2) tc - -65c to +125c 30 volts 60 volts 100 volts 200 volts 300 volts 400 volts 1000 ohms maximum. 2 values apply for zero or negative gate voltage only. rms on-state current, it(rms) (^ conduction angles) peak one cycle surge (non-rep) on-state current, itsm peak gate power dissipation, pgm average gate power dissipation, pg(av) peak positive gate current, iqm peak negative gate voltage, vgm ? storage temperature, tstg operating junction temperature, tj 0.8 amperes 8.0 amperes .1.0 watts for 8.3 msec. 0.01 watts 0.5 amperes 8 volts -65c to+150c -65c to+1256c quality semi-conductors
c203 test peak reverse and off- state current (all types) dc gate trigger current dc gate trigger voltage peak on-state voltage holding current critical rate-of-rise of off-state voltage circuit commutated turn-off time steady-state thermal resistance symbol irrm or idrm igt vgt vtm ih dv/dt tq r0jc r0ja win. ? ? - ? ? ? 0.1 ? - - ? - - typ. ? ? ? - - - _ - - - 20 15 - - max. 1.0 50 200 500 0.8 1.0 ? 1.5 5.0 10.0 ? 125 230 units ua /nadc vdc v madc v/a/sec /jsec c/w test conditions tc = +25c, rgk = 1000 ohms vrrm = vdrm = rated value. tc = +1256c, rgk = 1000 ohms vrrm = vdrm = rated value. tc = +25c, vd = 6vdc, rl = 100 ohms. tc = -65c, vd = 6vdc, rl = 100 ohms. tc = +25c, vd = 6vdc, rl = 100 ohms. tc = -65c, vd = 6vdc, rl = 100 ohms. tc=+125c, rated vdrm, rl = 1000 ohms. tc =+250c,itm = l.oapeak, 1 msec, wide pulse, duty cycle < 2% anode source voltage = 12vdc, rgk = 1000 ohms. tc = +25c. tc = -65c tc = +125c, rated vdrm, rgk = 1000 ohms. tc = +125c, rectangular current waveform. rate-of-rise of current <10a/msec. rate reversal of current <5a//isec. itm = 1a (so^sec. pulse). rep. rate = 60pps. vrrm = rated, vrx = 15vmin., vdrm = rated. rate-of-rise of reapplied off-state voltage = 20v/jusec.; gate bias = 0 volts, 100 ohms (during turn-off time interval). junction-to-case (flat side of case is temperature reference point). junction-to-ambient (free convection).
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